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Mg Doping of N-Polar, In-Rich InAlN
Metal organic chemical vapor deposition was used to grow N-polar In(0.63)Al(0.37)N on sapphire substrates. P-doping was provided by a precursor flow of Cp(2)Mg between 0 and 130 nmol/min, reaching a Cp(2)Mg/III ratio of 8.3 × 10(−3). The grain structure of 360 nm thick InAlN was spoiled by pits afte...
| Autores principales: | , , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10056125/ https://www.ncbi.nlm.nih.gov/pubmed/36984128 http://dx.doi.org/10.3390/ma16062250 |