Laser-Patterned Alumina Mask and Mask-Less Dry Etch of Si for Light Trapping with Photonic Crystal Structures

Ultra-short 230 fs laser pulses of a 515 nm wavelength were tightly focused onto 700 nm focal spots and utilised in opening ∼0.4–1 μm holes in alumina Al(2)O(3) etch masks with a 20–50 nm thickness. Such dielectric masks simplify the fabrication of photonic crystal (PhC) light-trapping patterns for...

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Detalles Bibliográficos
Autores principales: Maksimovic, Jovan, Mu, Haoran, Smith, Daniel, Katkus, Tomas, Vaičiulis, Mantas, Aleksiejūnas, Ramūnas, Seniutinas, Gediminas, Ng, Soon Hock, Juodkazis, Saulius
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10056451/
https://www.ncbi.nlm.nih.gov/pubmed/36984957
http://dx.doi.org/10.3390/mi14030550

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10056451/
https://www.ncbi.nlm.nih.gov/pubmed/36984957
http://dx.doi.org/10.3390/mi14030550

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