Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications

This research work uses sp(3)d(5)s* tight-binding models to design and analyze the structural properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide (GaAs) Nanowires (NWs). The electrical characteristics of the NWs, which are shielded with Lanthanum Oxide (La(2)O(3)...

Descripción completa

Detalles Bibliográficos
Autores principales: Paramasivam, Pattunnarajam, Gowthaman, Naveenbalaji, Srivastava, Viranjay M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10056459/
https://www.ncbi.nlm.nih.gov/pubmed/36985854
http://dx.doi.org/10.3390/nano13060959

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10056459/
https://www.ncbi.nlm.nih.gov/pubmed/36985854
http://dx.doi.org/10.3390/nano13060959

Ejemplares similares