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Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications

This research work uses sp(3)d(5)s* tight-binding models to design and analyze the structural properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide (GaAs) Nanowires (NWs). The electrical characteristics of the NWs, which are shielded with Lanthanum Oxide (La(2)O(3)...

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Detalles Bibliográficos
Autores principales:	Paramasivam, Pattunnarajam, Gowthaman, Naveenbalaji, Srivastava, Viranjay M.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10056459/ https://www.ncbi.nlm.nih.gov/pubmed/36985854 http://dx.doi.org/10.3390/nano13060959

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