MOSs-String-Triggered Silicon-Controlled Rectifier (MTSCR) ESD Protection Device for 1.8 V Application

In this work, a new low voltage-triggered silicon-controlled rectifier named MTSCR is realized in a 65 nm CMOS process for low voltage-integrated circuits electrostatic discharge (ESD) protections. The MTSCR incorporates an external NMOSs-string, which drives the internal NMOS (INMOS) of MTSCR to tu...

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Detalles Bibliográficos
Autores principales: Chen, Ruibo, Wei, Hao, Liu, Hongxia, Hou, Fei, Xiang, Qi, Du, Feibo, Yan, Cong, Gao, Tianzhi, Liu, Zhiwei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10056861/
https://www.ncbi.nlm.nih.gov/pubmed/36985040
http://dx.doi.org/10.3390/mi14030632

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10056861/
https://www.ncbi.nlm.nih.gov/pubmed/36985040
http://dx.doi.org/10.3390/mi14030632

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