Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer

In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for high power GaN HEMT developed for power electronics applications, such as power converters or photonic driver applications, with large gate periphery and chip size, as well as an Au metal heat-spreading lay...

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Detalles Bibliográficos
Autores principales: Hong, Kuo-Bin, Peng, Chun-Yen, Lin, Wei-Cheng, Chen, Kuan-Lun, Chen, Shih-Chen, Kuo, Hao-Chung, Chang, Edward Yi, Lin, Chun-Hsiung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10056976/
https://www.ncbi.nlm.nih.gov/pubmed/36984926
http://dx.doi.org/10.3390/mi14030519

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10056976/
https://www.ncbi.nlm.nih.gov/pubmed/36984926
http://dx.doi.org/10.3390/mi14030519

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