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Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer
In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for high power GaN HEMT developed for power electronics applications, such as power converters or photonic driver applications, with large gate periphery and chip size, as well as an Au metal heat-spreading lay...
Autores principales: | Hong, Kuo-Bin, Peng, Chun-Yen, Lin, Wei-Cheng, Chen, Kuan-Lun, Chen, Shih-Chen, Kuo, Hao-Chung, Chang, Edward Yi, Lin, Chun-Hsiung |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10056976/ https://www.ncbi.nlm.nih.gov/pubmed/36984926 http://dx.doi.org/10.3390/mi14030519 |
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