Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories

A methodology to estimate the device temperature in resistive random access memories (RRAMs) is presented. Unipolar devices, which are known to be highly influenced by thermal effects in their resistive switching operation, are employed to develop the technique. A 3D RRAM simulator is used to fit ex...

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Detalles Bibliográficos
Autores principales: Aguilera-Pedregosa, Cristina, Maldonado, David, González, Mireia B., Moreno, Enrique, Jiménez-Molinos, Francisco, Campabadal, Francesca, Roldán, Juan B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10057622/
https://www.ncbi.nlm.nih.gov/pubmed/36985037
http://dx.doi.org/10.3390/mi14030630

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10057622/
https://www.ncbi.nlm.nih.gov/pubmed/36985037
http://dx.doi.org/10.3390/mi14030630

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