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Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories
A methodology to estimate the device temperature in resistive random access memories (RRAMs) is presented. Unipolar devices, which are known to be highly influenced by thermal effects in their resistive switching operation, are employed to develop the technique. A 3D RRAM simulator is used to fit ex...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10057622/ https://www.ncbi.nlm.nih.gov/pubmed/36985037 http://dx.doi.org/10.3390/mi14030630 |