Novel Low Power Cross-Coupled FET-Based Sense Amplifier Design for High-Speed SRAM Circuits

We live in a technologically advanced society where we all use semiconductor chips in the majority of our gadgets, and the basic criterion concerning data storage and memory is a small footprint and low power consumption. SRAM is a very important part of this and can be used to meet all the above cr...

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Detalles Bibliográficos
Autores principales: Priya, G. Lakshmi, Saran, Puneet, Padhy, Shikhar Kumar, Agarwal, Prateek, Andrew Roobert, A., Julus, L. Jerart
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10057788/
https://www.ncbi.nlm.nih.gov/pubmed/36984987
http://dx.doi.org/10.3390/mi14030581

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10057788/
https://www.ncbi.nlm.nih.gov/pubmed/36984987
http://dx.doi.org/10.3390/mi14030581

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