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Novel Low Power Cross-Coupled FET-Based Sense Amplifier Design for High-Speed SRAM Circuits
We live in a technologically advanced society where we all use semiconductor chips in the majority of our gadgets, and the basic criterion concerning data storage and memory is a small footprint and low power consumption. SRAM is a very important part of this and can be used to meet all the above cr...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10057788/ https://www.ncbi.nlm.nih.gov/pubmed/36984987 http://dx.doi.org/10.3390/mi14030581 |