Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress

In conventional parameters design, the driving circuit is usually simplified as an RLC second-order circuit, and the switching characteristics are optimized by selecting parameters, but the influence of switching characteristics on the driving circuit is not considered. In this paper, the insight me...

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Detalles Bibliográficos
Autores principales: Qin, Haihong, Ba, Zhenhua, Xie, Sixuan, Zhang, Zimo, Chen, Wenming, Xun, Qian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10057865/
https://www.ncbi.nlm.nih.gov/pubmed/36984912
http://dx.doi.org/10.3390/mi14030505

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10057865/
https://www.ncbi.nlm.nih.gov/pubmed/36984912
http://dx.doi.org/10.3390/mi14030505

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