Cargando…
Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress
In conventional parameters design, the driving circuit is usually simplified as an RLC second-order circuit, and the switching characteristics are optimized by selecting parameters, but the influence of switching characteristics on the driving circuit is not considered. In this paper, the insight me...
Autores principales: | , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10057865/ https://www.ncbi.nlm.nih.gov/pubmed/36984912 http://dx.doi.org/10.3390/mi14030505 |
_version_ | 1785016476646768640 |
---|---|
author | Qin, Haihong Ba, Zhenhua Xie, Sixuan Zhang, Zimo Chen, Wenming Xun, Qian |
author_facet | Qin, Haihong Ba, Zhenhua Xie, Sixuan Zhang, Zimo Chen, Wenming Xun, Qian |
author_sort | Qin, Haihong |
collection | PubMed |
description | In conventional parameters design, the driving circuit is usually simplified as an RLC second-order circuit, and the switching characteristics are optimized by selecting parameters, but the influence of switching characteristics on the driving circuit is not considered. In this paper, the insight mechanism for the gate-source voltage changed by overshoot and ringing caused by the high switching speed of SiC MOSFET is highlighted, and we propose an optimized design method to obtain optimal parameters of the SiC MOSFET driving circuit with consideration of parasitic parameters. Based on the double-pulse circuit, we evaluated the influence of main parameters on the gate-source voltage, including driving voltage, driving resistance, gate parasitic inductance, and stray inductance of the power circuit. A SiC-based boost PFC is constructed and tested. The test results show that the switching loss can be reduced by 7.282 W by using the proposed parameter optimization method, and the over-voltage stress of SiC MOSFET is avoided. |
format | Online Article Text |
id | pubmed-10057865 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-100578652023-03-30 Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress Qin, Haihong Ba, Zhenhua Xie, Sixuan Zhang, Zimo Chen, Wenming Xun, Qian Micromachines (Basel) Article In conventional parameters design, the driving circuit is usually simplified as an RLC second-order circuit, and the switching characteristics are optimized by selecting parameters, but the influence of switching characteristics on the driving circuit is not considered. In this paper, the insight mechanism for the gate-source voltage changed by overshoot and ringing caused by the high switching speed of SiC MOSFET is highlighted, and we propose an optimized design method to obtain optimal parameters of the SiC MOSFET driving circuit with consideration of parasitic parameters. Based on the double-pulse circuit, we evaluated the influence of main parameters on the gate-source voltage, including driving voltage, driving resistance, gate parasitic inductance, and stray inductance of the power circuit. A SiC-based boost PFC is constructed and tested. The test results show that the switching loss can be reduced by 7.282 W by using the proposed parameter optimization method, and the over-voltage stress of SiC MOSFET is avoided. MDPI 2023-02-21 /pmc/articles/PMC10057865/ /pubmed/36984912 http://dx.doi.org/10.3390/mi14030505 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Qin, Haihong Ba, Zhenhua Xie, Sixuan Zhang, Zimo Chen, Wenming Xun, Qian Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress |
title | Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress |
title_full | Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress |
title_fullStr | Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress |
title_full_unstemmed | Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress |
title_short | Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress |
title_sort | parameters design and optimization of sic mosfet driving circuit with consideration of comprehensive loss and voltage stress |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10057865/ https://www.ncbi.nlm.nih.gov/pubmed/36984912 http://dx.doi.org/10.3390/mi14030505 |
work_keys_str_mv | AT qinhaihong parametersdesignandoptimizationofsicmosfetdrivingcircuitwithconsiderationofcomprehensivelossandvoltagestress AT bazhenhua parametersdesignandoptimizationofsicmosfetdrivingcircuitwithconsiderationofcomprehensivelossandvoltagestress AT xiesixuan parametersdesignandoptimizationofsicmosfetdrivingcircuitwithconsiderationofcomprehensivelossandvoltagestress AT zhangzimo parametersdesignandoptimizationofsicmosfetdrivingcircuitwithconsiderationofcomprehensivelossandvoltagestress AT chenwenming parametersdesignandoptimizationofsicmosfetdrivingcircuitwithconsiderationofcomprehensivelossandvoltagestress AT xunqian parametersdesignandoptimizationofsicmosfetdrivingcircuitwithconsiderationofcomprehensivelossandvoltagestress |