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Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress

In conventional parameters design, the driving circuit is usually simplified as an RLC second-order circuit, and the switching characteristics are optimized by selecting parameters, but the influence of switching characteristics on the driving circuit is not considered. In this paper, the insight me...

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Autores principales: Qin, Haihong, Ba, Zhenhua, Xie, Sixuan, Zhang, Zimo, Chen, Wenming, Xun, Qian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10057865/
https://www.ncbi.nlm.nih.gov/pubmed/36984912
http://dx.doi.org/10.3390/mi14030505
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author Qin, Haihong
Ba, Zhenhua
Xie, Sixuan
Zhang, Zimo
Chen, Wenming
Xun, Qian
author_facet Qin, Haihong
Ba, Zhenhua
Xie, Sixuan
Zhang, Zimo
Chen, Wenming
Xun, Qian
author_sort Qin, Haihong
collection PubMed
description In conventional parameters design, the driving circuit is usually simplified as an RLC second-order circuit, and the switching characteristics are optimized by selecting parameters, but the influence of switching characteristics on the driving circuit is not considered. In this paper, the insight mechanism for the gate-source voltage changed by overshoot and ringing caused by the high switching speed of SiC MOSFET is highlighted, and we propose an optimized design method to obtain optimal parameters of the SiC MOSFET driving circuit with consideration of parasitic parameters. Based on the double-pulse circuit, we evaluated the influence of main parameters on the gate-source voltage, including driving voltage, driving resistance, gate parasitic inductance, and stray inductance of the power circuit. A SiC-based boost PFC is constructed and tested. The test results show that the switching loss can be reduced by 7.282 W by using the proposed parameter optimization method, and the over-voltage stress of SiC MOSFET is avoided.
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spelling pubmed-100578652023-03-30 Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress Qin, Haihong Ba, Zhenhua Xie, Sixuan Zhang, Zimo Chen, Wenming Xun, Qian Micromachines (Basel) Article In conventional parameters design, the driving circuit is usually simplified as an RLC second-order circuit, and the switching characteristics are optimized by selecting parameters, but the influence of switching characteristics on the driving circuit is not considered. In this paper, the insight mechanism for the gate-source voltage changed by overshoot and ringing caused by the high switching speed of SiC MOSFET is highlighted, and we propose an optimized design method to obtain optimal parameters of the SiC MOSFET driving circuit with consideration of parasitic parameters. Based on the double-pulse circuit, we evaluated the influence of main parameters on the gate-source voltage, including driving voltage, driving resistance, gate parasitic inductance, and stray inductance of the power circuit. A SiC-based boost PFC is constructed and tested. The test results show that the switching loss can be reduced by 7.282 W by using the proposed parameter optimization method, and the over-voltage stress of SiC MOSFET is avoided. MDPI 2023-02-21 /pmc/articles/PMC10057865/ /pubmed/36984912 http://dx.doi.org/10.3390/mi14030505 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Qin, Haihong
Ba, Zhenhua
Xie, Sixuan
Zhang, Zimo
Chen, Wenming
Xun, Qian
Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress
title Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress
title_full Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress
title_fullStr Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress
title_full_unstemmed Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress
title_short Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress
title_sort parameters design and optimization of sic mosfet driving circuit with consideration of comprehensive loss and voltage stress
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10057865/
https://www.ncbi.nlm.nih.gov/pubmed/36984912
http://dx.doi.org/10.3390/mi14030505
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