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Low-Frequency Noise-Based Mechanism Analysis of Endurance Degradation in Al/αTiO(x)/Al Resistive Random Access Memory Devices
In this work, we analyze a resistive switching random access memory (RRAM) device with the metal–insulator–metal structure of Al/αTiO(x)/Al. The transport mechanism of our RRAM device is trap-controlled space-charge limited conduction, which does not change during the endurance test. As the number o...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10058136/ https://www.ncbi.nlm.nih.gov/pubmed/36984197 http://dx.doi.org/10.3390/ma16062317 |