Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device

In this paper, nanosheet deformation during channel release has been investigated and discussed in Gate-All-Around (GAA) transistors. Structures with different source/drain size and stacked Si nanosheet lengths were designed and fabricated. The experiment of channel release showed that the stress ca...

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Detalles Bibliográficos
Autores principales: Yang, Jingwen, Chen, Kun, Wang, Dawei, Liu, Tao, Sun, Xin, Wang, Qiang, Huang, Ziqiang, Pan, Zhecheng, Xu, Saisheng, Wang, Chen, Wu, Chunlei, Xu, Min, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10058282/
https://www.ncbi.nlm.nih.gov/pubmed/36985018
http://dx.doi.org/10.3390/mi14030611

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10058282/
https://www.ncbi.nlm.nih.gov/pubmed/36985018
http://dx.doi.org/10.3390/mi14030611

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