Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device

In this paper, nanosheet deformation during channel release has been investigated and discussed in Gate-All-Around (GAA) transistors. Structures with different source/drain size and stacked Si nanosheet lengths were designed and fabricated. The experiment of channel release showed that the stress caused serious deformation to suspended nanosheets. With the guidance of the experiment result, based on simulation studies using the COMSOL Multiphysics and Sentaurus tools, it is confirmed that the stress applied on the channel from source/drain plays an important role in nanosheet deformation during the fabrication process. The deformation of Si nanosheets would cause a serious degradation of the device performance due to an inability to control the work function of the metal gate. This study proposed that the uniformly stacked GAA nanosheets structure could be successfully demonstrated with suitable channel stress engineering provided by fitting S/D size and an appropriate channel length. The conclusions provide useful guidelines for future stacked GAA transistors’ design and fabrication.