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Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device
In this paper, nanosheet deformation during channel release has been investigated and discussed in Gate-All-Around (GAA) transistors. Structures with different source/drain size and stacked Si nanosheet lengths were designed and fabricated. The experiment of channel release showed that the stress ca...
Autores principales: | Yang, Jingwen, Chen, Kun, Wang, Dawei, Liu, Tao, Sun, Xin, Wang, Qiang, Huang, Ziqiang, Pan, Zhecheng, Xu, Saisheng, Wang, Chen, Wu, Chunlei, Xu, Min, Zhang, David Wei |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10058282/ https://www.ncbi.nlm.nih.gov/pubmed/36985018 http://dx.doi.org/10.3390/mi14030611 |
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