Charge Trapping and Emission Properties in CAAC-IGZO Transistor: A First-Principles Calculations

The c-axis aligned crystalline indium-gallium-zinc-oxide field-effect transistor (CAAC-IGZO FET), exhibiting an extremely low off-state leakage current (~10(−22) A/μm), has promised to be an ideal candidate for Dynamic Random Access Memory (DRAM) applications. However, the instabilities leaded by th...

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Detalles Bibliográficos
Autores principales: Wang, Ziqi, Lu, Nianduan, Wang, Jiawei, Geng, Di, Wang, Lingfei, Yang, Guanhua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10058374/
https://www.ncbi.nlm.nih.gov/pubmed/36984162
http://dx.doi.org/10.3390/ma16062282

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10058374/
https://www.ncbi.nlm.nih.gov/pubmed/36984162
http://dx.doi.org/10.3390/ma16062282

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