Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices

Silicon carbide (SiC) has become a promising optical material for quantum photonics and nonlinear photonics during the past decade. In this work, we propose two methods to improve the 4H-SiC thin film quality for SiC integrated photonic chips. Firstly, we develop a wet-oxidation-assisted chemical me...

Descripción completa

Detalles Bibliográficos
Autores principales: Shi, Xiaodong, Lu, Yaoqin, Chaussende, Didier, Rottwitt, Karsten, Ou, Haiyan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10058445/
https://www.ncbi.nlm.nih.gov/pubmed/36984202
http://dx.doi.org/10.3390/ma16062324

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10058445/
https://www.ncbi.nlm.nih.gov/pubmed/36984202
http://dx.doi.org/10.3390/ma16062324

Ejemplares similares