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Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices

Silicon carbide (SiC) has become a promising optical material for quantum photonics and nonlinear photonics during the past decade. In this work, we propose two methods to improve the 4H-SiC thin film quality for SiC integrated photonic chips. Firstly, we develop a wet-oxidation-assisted chemical me...

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Detalles Bibliográficos
Autores principales: Shi, Xiaodong, Lu, Yaoqin, Chaussende, Didier, Rottwitt, Karsten, Ou, Haiyan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10058445/
https://www.ncbi.nlm.nih.gov/pubmed/36984202
http://dx.doi.org/10.3390/ma16062324
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author Shi, Xiaodong
Lu, Yaoqin
Chaussende, Didier
Rottwitt, Karsten
Ou, Haiyan
author_facet Shi, Xiaodong
Lu, Yaoqin
Chaussende, Didier
Rottwitt, Karsten
Ou, Haiyan
author_sort Shi, Xiaodong
collection PubMed
description Silicon carbide (SiC) has become a promising optical material for quantum photonics and nonlinear photonics during the past decade. In this work, we propose two methods to improve the 4H-SiC thin film quality for SiC integrated photonic chips. Firstly, we develop a wet-oxidation-assisted chemical mechanical polishing (CMP) process for 4H-SiC, which can significantly decrease the surface roughness from 3.67 nm to 0.15 nm, thus mitigating the light scattering loss. Secondly, we find that the thermal annealing of the 4H-SiC devices at 1300 °C can help to decrease the material absorption loss. We experimentally demonstrate that the wet-oxidation-assisted CMP and the high-temperature annealing can effectively increase the intrinsic quality factor of the 4H-SiC optical microring resonators.
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spelling pubmed-100584452023-03-30 Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices Shi, Xiaodong Lu, Yaoqin Chaussende, Didier Rottwitt, Karsten Ou, Haiyan Materials (Basel) Article Silicon carbide (SiC) has become a promising optical material for quantum photonics and nonlinear photonics during the past decade. In this work, we propose two methods to improve the 4H-SiC thin film quality for SiC integrated photonic chips. Firstly, we develop a wet-oxidation-assisted chemical mechanical polishing (CMP) process for 4H-SiC, which can significantly decrease the surface roughness from 3.67 nm to 0.15 nm, thus mitigating the light scattering loss. Secondly, we find that the thermal annealing of the 4H-SiC devices at 1300 °C can help to decrease the material absorption loss. We experimentally demonstrate that the wet-oxidation-assisted CMP and the high-temperature annealing can effectively increase the intrinsic quality factor of the 4H-SiC optical microring resonators. MDPI 2023-03-14 /pmc/articles/PMC10058445/ /pubmed/36984202 http://dx.doi.org/10.3390/ma16062324 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Shi, Xiaodong
Lu, Yaoqin
Chaussende, Didier
Rottwitt, Karsten
Ou, Haiyan
Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices
title Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices
title_full Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices
title_fullStr Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices
title_full_unstemmed Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices
title_short Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices
title_sort wet-oxidation-assisted chemical mechanical polishing and high-temperature thermal annealing for low-loss 4h-sic integrated photonic devices
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10058445/
https://www.ncbi.nlm.nih.gov/pubmed/36984202
http://dx.doi.org/10.3390/ma16062324
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