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Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor

A novel Schottky barrier MOSFET with quad gate and with source engineering has been proposed in this work. A high-κ dielectric is used at the source side of the channel, while SiO(2) is used at the drain side of the channel. To improve the carrier mobility, a SiGe pocket region is created at the sou...

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Detalles Bibliográficos
Autores principales: Esakki, Papanasam, Kumar, Prashanth, Esakki, Manikandan, Venkatesh, Adithya
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10058718/
https://www.ncbi.nlm.nih.gov/pubmed/36985092
http://dx.doi.org/10.3390/mi14030685