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Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor
A novel Schottky barrier MOSFET with quad gate and with source engineering has been proposed in this work. A high-κ dielectric is used at the source side of the channel, while SiO(2) is used at the drain side of the channel. To improve the carrier mobility, a SiGe pocket region is created at the sou...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10058718/ https://www.ncbi.nlm.nih.gov/pubmed/36985092 http://dx.doi.org/10.3390/mi14030685 |