Nanoscale Phase Change Material Array by Sub-Resolution Assist Feature for Storage Class Memory Application

High density phase change memory array requires both minimized critical dimension (CD) and maximized process window for the phase change material layer. High in-wafer uniformity of the nanoscale patterning of chalcogenides material is challenging given the optical proximity effect (OPE) in the litho...

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Detalles Bibliográficos
Autores principales: Zhang, Jiarui, Fang, Wencheng, Wang, Ruobing, Li, Chengxing, Zheng, Jia, Zou, Xixi, Song, Sannian, Song, Zhitang, Zhou, Xilin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10059855/
https://www.ncbi.nlm.nih.gov/pubmed/36985944
http://dx.doi.org/10.3390/nano13061050

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10059855/
https://www.ncbi.nlm.nih.gov/pubmed/36985944
http://dx.doi.org/10.3390/nano13061050

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