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Nanoscale Phase Change Material Array by Sub-Resolution Assist Feature for Storage Class Memory Application
High density phase change memory array requires both minimized critical dimension (CD) and maximized process window for the phase change material layer. High in-wafer uniformity of the nanoscale patterning of chalcogenides material is challenging given the optical proximity effect (OPE) in the litho...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10059855/ https://www.ncbi.nlm.nih.gov/pubmed/36985944 http://dx.doi.org/10.3390/nano13061050 |