Self-Adaption of the GIDL Erase Promotes Stacking More Layers in 3D NAND Flash

The bit density is generally increased by stacking more layers in 3D NAND Flash. Gate-induced drain leakage (GIDL) erase is a critical enabler in the future development of 3D NAND Flash. The relationship between the drain-to-body potential (V(db)) of GIDL transistors and the increasing number of lay...

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Detalles Bibliográficos
Autores principales: Yang, Tao, Zhang, Bao, Wang, Qi, Jin, Lei, Xia, Zhiliang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10059897/
https://www.ncbi.nlm.nih.gov/pubmed/36985093
http://dx.doi.org/10.3390/mi14030686

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10059897/
https://www.ncbi.nlm.nih.gov/pubmed/36985093
http://dx.doi.org/10.3390/mi14030686

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