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Self-Adaption of the GIDL Erase Promotes Stacking More Layers in 3D NAND Flash
The bit density is generally increased by stacking more layers in 3D NAND Flash. Gate-induced drain leakage (GIDL) erase is a critical enabler in the future development of 3D NAND Flash. The relationship between the drain-to-body potential (V(db)) of GIDL transistors and the increasing number of lay...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10059897/ https://www.ncbi.nlm.nih.gov/pubmed/36985093 http://dx.doi.org/10.3390/mi14030686 |