Interface-engineered ferroelectricity of epitaxial Hf(0.5)Zr(0.5)O(2) thin films

Ferroelectric hafnia-based thin films have attracted intense attention due to their compatibility with complementary metal-oxide-semiconductor technology. However, the ferroelectric orthorhombic phase is thermodynamically metastable. Various efforts have been made to stabilize the ferroelectric orth...

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Detalles Bibliográficos
Autores principales: Shi, Shu, Xi, Haolong, Cao, Tengfei, Lin, Weinan, Liu, Zhongran, Niu, Jiangzhen, Lan, Da, Zhou, Chenghang, Cao, Jing, Su, Hanxin, Zhao, Tieyang, Yang, Ping, Zhu, Yao, Yan, Xiaobing, Tsymbal, Evgeny Y., Tian, He, Chen, Jingsheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10063548/
https://www.ncbi.nlm.nih.gov/pubmed/36997572
http://dx.doi.org/10.1038/s41467-023-37560-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10063548/
https://www.ncbi.nlm.nih.gov/pubmed/36997572
http://dx.doi.org/10.1038/s41467-023-37560-3

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