Ferroelectric Wide‐Bandgap Metal Halide Perovskite Field‐Effect Transistors: Toward Transparent Electronics

Transparent field‐effect transistors (FETs) are attacking intensive interest for constructing fancy “invisible” electronic products. Presently, the main technology for realizing transparent FETs is based on metal oxide semiconductors, which have wide‐bandgap but generally demand sputtering technique...

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Detalles Bibliográficos
Autores principales: Xia, Jiangnan, Qiu, Xincan, Liu, Yu, Chen, Ping‐An, Guo, Jing, Wei, Huan, Ding, Jiaqi, Xie, Haihong, Lv, Yawei, Li, Fuxiang, Li, Wenwu, Liao, Lei, Hu, Yuanyuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10074105/
https://www.ncbi.nlm.nih.gov/pubmed/36703612
http://dx.doi.org/10.1002/advs.202300133

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10074105/
https://www.ncbi.nlm.nih.gov/pubmed/36703612
http://dx.doi.org/10.1002/advs.202300133

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