X-ray scattering study of GaN nanowires grown on Ti/Al(2)O(3) by molecular beam epitaxy

GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on Al(2)O(3) are studied by X-ray diffraction (XRD) and grazing-incidence small-angle X-ray scattering (GISAXS). XRD, performed both in symmetric Bragg reflection mode and at grazing incidence, reveals Ti, TiN, Ti(3)O, Ti(3)Al...

Descripción completa

Detalles Bibliográficos
Autores principales: Kaganer, Vladimir M., Konovalov, Oleg V., Calabrese, Gabriele, van Treeck, David, Kwasniewski, Albert, Richter, Carsten, Fernández-Garrido, Sergio, Brandt, Oliver
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2023
Materias:
Research Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10077859/
https://www.ncbi.nlm.nih.gov/pubmed/37032962
http://dx.doi.org/10.1107/S1600576723001486

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10077859/
https://www.ncbi.nlm.nih.gov/pubmed/37032962
http://dx.doi.org/10.1107/S1600576723001486

Ejemplares similares