Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics

[Image: see text] Amorphous metal oxides with analog resistive switching functions (i.e., continuous controllability of the electrical resistance) are gaining emerging interest due to their neuromorphic functionalities promising for energy efficient electronics. The mechanisms are currently attribut...

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Detalles Bibliográficos
Autores principales: Tsurumaki-Fukuchi, Atsushi, Katase, Takayoshi, Ohta, Hiromichi, Arita, Masashi, Takahashi, Yasuo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10080533/
https://www.ncbi.nlm.nih.gov/pubmed/36952672
http://dx.doi.org/10.1021/acsami.2c21568

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10080533/
https://www.ncbi.nlm.nih.gov/pubmed/36952672
http://dx.doi.org/10.1021/acsami.2c21568

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