Cargando…

Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics

[Image: see text] Amorphous metal oxides with analog resistive switching functions (i.e., continuous controllability of the electrical resistance) are gaining emerging interest due to their neuromorphic functionalities promising for energy efficient electronics. The mechanisms are currently attribut...

Descripción completa

Detalles Bibliográficos
Autores principales: Tsurumaki-Fukuchi, Atsushi, Katase, Takayoshi, Ohta, Hiromichi, Arita, Masashi, Takahashi, Yasuo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10080533/
https://www.ncbi.nlm.nih.gov/pubmed/36952672
http://dx.doi.org/10.1021/acsami.2c21568
_version_ 1785020944129982464
author Tsurumaki-Fukuchi, Atsushi
Katase, Takayoshi
Ohta, Hiromichi
Arita, Masashi
Takahashi, Yasuo
author_facet Tsurumaki-Fukuchi, Atsushi
Katase, Takayoshi
Ohta, Hiromichi
Arita, Masashi
Takahashi, Yasuo
author_sort Tsurumaki-Fukuchi, Atsushi
collection PubMed
description [Image: see text] Amorphous metal oxides with analog resistive switching functions (i.e., continuous controllability of the electrical resistance) are gaining emerging interest due to their neuromorphic functionalities promising for energy efficient electronics. The mechanisms are currently attributed to field-driven migration of the constituent ions, but the applications are being hindered by the limited understanding of the physical mechanisms due to the difficulty in analyzing the causal ion migration, which occurs on a nanometer or even atomic scale. Here, the direct electrical transport measurement of analog resistive switching and ångström scale imaging of the causal ion migration is demonstrated in amorphous TaO(x) (a-TaO(x)) by conductive atomic force microscopy. Atomically flat thin films of a-TaO(x), which is a practical material for commercial resistive random access memory, are fabricated in this study, and the mechanisms of the three known types of analog resistive switching phenomena (current-dependent set, voltage-dependent reset, and time-dependent switching) are directly visualized on the surfaces. The observations indicate that highly analog type of resistive switching can be induced in a-TaO(x) by inducing the continuous redox reactions for 2.0 < x < 2.5, which are characteristic of a-TaO(x). The measurements also demonstrate drastic control of the switching stochasticity, which is attributable to controlled segregation of a metastable a-TaO(2) phase. The findings provide direct clues for tuning the analog resistive switching characteristics of amorphous metal oxides and developing new functions for future neuromorphic computing.
format Online
Article
Text
id pubmed-10080533
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher American Chemical Society
record_format MEDLINE/PubMed
spelling pubmed-100805332023-04-08 Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics Tsurumaki-Fukuchi, Atsushi Katase, Takayoshi Ohta, Hiromichi Arita, Masashi Takahashi, Yasuo ACS Appl Mater Interfaces [Image: see text] Amorphous metal oxides with analog resistive switching functions (i.e., continuous controllability of the electrical resistance) are gaining emerging interest due to their neuromorphic functionalities promising for energy efficient electronics. The mechanisms are currently attributed to field-driven migration of the constituent ions, but the applications are being hindered by the limited understanding of the physical mechanisms due to the difficulty in analyzing the causal ion migration, which occurs on a nanometer or even atomic scale. Here, the direct electrical transport measurement of analog resistive switching and ångström scale imaging of the causal ion migration is demonstrated in amorphous TaO(x) (a-TaO(x)) by conductive atomic force microscopy. Atomically flat thin films of a-TaO(x), which is a practical material for commercial resistive random access memory, are fabricated in this study, and the mechanisms of the three known types of analog resistive switching phenomena (current-dependent set, voltage-dependent reset, and time-dependent switching) are directly visualized on the surfaces. The observations indicate that highly analog type of resistive switching can be induced in a-TaO(x) by inducing the continuous redox reactions for 2.0 < x < 2.5, which are characteristic of a-TaO(x). The measurements also demonstrate drastic control of the switching stochasticity, which is attributable to controlled segregation of a metastable a-TaO(2) phase. The findings provide direct clues for tuning the analog resistive switching characteristics of amorphous metal oxides and developing new functions for future neuromorphic computing. American Chemical Society 2023-03-23 /pmc/articles/PMC10080533/ /pubmed/36952672 http://dx.doi.org/10.1021/acsami.2c21568 Text en © 2023 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by-nc-nd/4.0/Permits non-commercial access and re-use, provided that author attribution and integrity are maintained; but does not permit creation of adaptations or other derivative works (https://creativecommons.org/licenses/by-nc-nd/4.0/).
spellingShingle Tsurumaki-Fukuchi, Atsushi
Katase, Takayoshi
Ohta, Hiromichi
Arita, Masashi
Takahashi, Yasuo
Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics
title Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics
title_full Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics
title_fullStr Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics
title_full_unstemmed Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics
title_short Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics
title_sort direct imaging of ion migration in amorphous oxide electronic synapses with intrinsic analog switching characteristics
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10080533/
https://www.ncbi.nlm.nih.gov/pubmed/36952672
http://dx.doi.org/10.1021/acsami.2c21568
work_keys_str_mv AT tsurumakifukuchiatsushi directimagingofionmigrationinamorphousoxideelectronicsynapseswithintrinsicanalogswitchingcharacteristics
AT katasetakayoshi directimagingofionmigrationinamorphousoxideelectronicsynapseswithintrinsicanalogswitchingcharacteristics
AT ohtahiromichi directimagingofionmigrationinamorphousoxideelectronicsynapseswithintrinsicanalogswitchingcharacteristics
AT aritamasashi directimagingofionmigrationinamorphousoxideelectronicsynapseswithintrinsicanalogswitchingcharacteristics
AT takahashiyasuo directimagingofionmigrationinamorphousoxideelectronicsynapseswithintrinsicanalogswitchingcharacteristics