GaN nanowires prepared by Cu-assisted photoelectron-chemical etching

A novel Cu-assisted photoelectron-chemical etching is proposed to fabricate GaN nanowires. The functional mechanism of assisted metals, etchant concentrations, and the addition of H(2)O(2) was investigated based on theoretical analysis and experiments. The low-cost metal-assisted etchant (CuSO(4)) p...

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Detalles Bibliográficos
Autores principales: Wang, Qi, Yang, Wen, Gao, Sheng, Chen, Weizhong, Tang, Xiaosheng, Zhang, Hongsheng, Liu, Bin, Han, Genquan, Huang, Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10089075/
https://www.ncbi.nlm.nih.gov/pubmed/37056620
http://dx.doi.org/10.1039/d2na00889k

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10089075/
https://www.ncbi.nlm.nih.gov/pubmed/37056620
http://dx.doi.org/10.1039/d2na00889k

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