Deep-trap dominated degradation of the endurance characteristics in OFET memory with polymer charge-trapping layer

Organic field-effect transistors (OFETs) with polymer charge-trapping dielectric, which exhibit many advantages over Si-based memory devices such as low cost, light weight, and flexibility, still suffer challenges in practical application due to the unsatisfied endurance characteristics and even the...

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Detalles Bibliográficos
Autores principales: Yu, Tianpeng, Liu, Zhenliang, Wang, Yiru, Zhang, Lunqiang, Hou, Shuyi, Wan, Zuteng, Yin, Jiang, Gao, Xu, Wu, Lei, Xia, Yidong, Liu, Zhiguo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10090149/
https://www.ncbi.nlm.nih.gov/pubmed/37041232
http://dx.doi.org/10.1038/s41598-023-32959-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10090149/
https://www.ncbi.nlm.nih.gov/pubmed/37041232
http://dx.doi.org/10.1038/s41598-023-32959-w

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