Thermionic Emission of Atomic Layer Deposited MoO(3)/Si UV Photodetectors

Ultrathin MoO(3) semiconductor nanostructures have garnered significant interest as a promising nanomaterial for transparent nano- and optoelectronics, owing to their exceptional reactivity. Due to the shortage of knowledge about the electronic and optoelectronic properties of MoO(3)/n-Si via an ALD...

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Detalles Bibliográficos
Autores principales: Basyooni, Mohamed A., Gaballah, A. E. H., Tihtih, Mohammed, Derkaoui, Issam, Zaki, Shrouk E., Eker, Yasin Ramazan, Ateş, Şule
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10095631/
https://www.ncbi.nlm.nih.gov/pubmed/37049060
http://dx.doi.org/10.3390/ma16072766

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10095631/
https://www.ncbi.nlm.nih.gov/pubmed/37049060
http://dx.doi.org/10.3390/ma16072766

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