The Heteroepitaxy of Thick β-Ga(2)O(3) Film on Sapphire Substrate with a β-(Al(x)Ga(1−x))(2)O(3) Intermediate Buffer Layer

A high aluminum (Al) content β-(Al(x)Ga(1−x))(2)O(3) film was synthesized on c-plane sapphire substrate using the gallium (Ga) diffusion method. The obtained β-(Al(x)Ga(1−x))(2)O(3) film had an average thickness of 750 nm and a surface roughness of 2.10 nm. Secondary ion mass spectrometry results in...

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Detalles Bibliográficos
Autores principales: Zhang, Wenhui, Zhang, Hezhi, Zhang, Song, Wang, Zishi, Liu, Litao, Zhang, Qi, Hu, Xibing, Liang, Hongwei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10095721/
https://www.ncbi.nlm.nih.gov/pubmed/37049068
http://dx.doi.org/10.3390/ma16072775

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10095721/
https://www.ncbi.nlm.nih.gov/pubmed/37049068
http://dx.doi.org/10.3390/ma16072775

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