Optoelectronic Properties of In(0.87)Ga(0.13)As(0.25)P(0.75)(001)β(2)(2×4) Surface: A First-Principles Study

InGaAsP photocathode surface affects the absorption, transport and escape of photons, and has a great influence on quantum efficiency. In order to study InGaAsP photocathode surface, the electronic structure, work function, formation energy, Mulliken population and optical properties of In(0.87)Ga(0...

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Detalles Bibliográficos
Autores principales: Wang, Yong, Li, Jianxin, Zhang, Junju, Sha, Weiwei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10095906/
https://www.ncbi.nlm.nih.gov/pubmed/37049128
http://dx.doi.org/10.3390/ma16072834

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10095906/
https://www.ncbi.nlm.nih.gov/pubmed/37049128
http://dx.doi.org/10.3390/ma16072834

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