IBIL Measurement and Optical Simulation of the D(I) Center in 4H-SiC

In this paper, D(I) defects are studied via experiments and calculations. The 2 MeV H(+) is used to carry on an ion-beam-induced luminescence (IBIL) experiment to measure the in-situ luminescence of untreated and annealed 4H-SiC at 100 K. The results show that the luminescence intensity decreases ra...

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Detalles Bibliográficos
Autores principales: Jiang, Wenli, Cheng, Wei, Qiu, Menglin, Wu, Shuai, Ouyang, Xiao, Chen, Lin, Pang, Pan, Ying, Minju, Liao, Bin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10096426/
https://www.ncbi.nlm.nih.gov/pubmed/37049229
http://dx.doi.org/10.3390/ma16072935

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10096426/
https://www.ncbi.nlm.nih.gov/pubmed/37049229
http://dx.doi.org/10.3390/ma16072935

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