IBIL Measurement and Optical Simulation of the D(I) Center in 4H-SiC

In this paper, D(I) defects are studied via experiments and calculations. The 2 MeV H(+) is used to carry on an ion-beam-induced luminescence (IBIL) experiment to measure the in-situ luminescence of untreated and annealed 4H-SiC at 100 K. The results show that the luminescence intensity decreases rapidly with increasing H(+) fluence, which means the losses of optical defect centers. In addition, the evident peak at 597 nm (2.07 eV) is the characteristic peak of 4H-SiC, and the weak peak between 400 nm and 450 nm is attributed to the D(I) optical center. Moreover, the first-principles calculation of 4H-SiC is adopted to discuss the origin of D(I) defects. The optical transition of the defect Si(C)(C(Si))(2) from q = 0 to q = 1 is considered the experimental value of the D(I) defect center.