Insight into over Repair of Hot Carrier Degradation by GIDL Current in Si p-FinFETs Using Ultra-Fast Measurement Technique

In this article, an experimental study on the gate-induced drain leakage (GIDL) current repairing worst hot carrier degradation (HCD) in Si p-FinFETs is investigated with the aid of an ultra-fast measurement (UFM) technique (~30 μs). It is found that increasing GIDL bias from 3 V to 4 V achieves a 1...

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Detalles Bibliográficos
Autores principales: Chang, Hao, Wang, Guilei, Yang, Hong, Liu, Qianqian, Zhou, Longda, Ji, Zhigang, Yu, Ruixi, Wu, Zhenhua, Yin, Huaxiang, Du, Anyan, Li, Junfeng, Luo, Jun, Zhao, Chao, Wang, Wenwu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10096823/
https://www.ncbi.nlm.nih.gov/pubmed/37049352
http://dx.doi.org/10.3390/nano13071259

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10096823/
https://www.ncbi.nlm.nih.gov/pubmed/37049352
http://dx.doi.org/10.3390/nano13071259

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