Electrical and Recombination Properties of Polar Orthorhombic κ-Ga(2)O(3) Films Prepared by Halide Vapor Phase Epitaxy

In this study, the structural and electrical properties of orthorhombic κ-Ga(2)O(3) films prepared using Halide Vapor Phase Epitaxy (HVPE) on AlN/Si and GaN/sapphire templates were studied. For κ-Ga(2)O(3)/AlN/Si structures, the formation of two-dimensional hole layers in the Ga(2)O(3) was studied a...

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Detalles Bibliográficos
Autores principales: Yakimov, Eugene B., Polyakov, Alexander Y., Nikolaev, Vladimir I., Pechnikov, Alexei I., Scheglov, Mikhail P., Yakimov, Eugene E., Pearton, Stephen J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10096940/
https://www.ncbi.nlm.nih.gov/pubmed/37049308
http://dx.doi.org/10.3390/nano13071214

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10096940/
https://www.ncbi.nlm.nih.gov/pubmed/37049308
http://dx.doi.org/10.3390/nano13071214

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