Area and Bandwidth Enhancement of an n(+)/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology

This paper presents a CMOS-integrated dot avalanche photodiode (dot-APD) that features a small central n(+)/p-well hemispherical cathode/p-well structure circularly surrounded by an anode ring. The dot-APD enables wide hemispherical depletion, charge collection from a large volume, and a small multi...

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Detalles Bibliográficos
Autores principales: Kohneh Poushi, Seyed Saman, Goll, Bernhard, Schneider-Hornstein, Kerstin, Hofbauer, Michael, Zimmermann, Horst
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10098577/
https://www.ncbi.nlm.nih.gov/pubmed/37050463
http://dx.doi.org/10.3390/s23073403

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10098577/
https://www.ncbi.nlm.nih.gov/pubmed/37050463
http://dx.doi.org/10.3390/s23073403

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