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Area and Bandwidth Enhancement of an n(+)/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology
This paper presents a CMOS-integrated dot avalanche photodiode (dot-APD) that features a small central n(+)/p-well hemispherical cathode/p-well structure circularly surrounded by an anode ring. The dot-APD enables wide hemispherical depletion, charge collection from a large volume, and a small multi...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10098577/ https://www.ncbi.nlm.nih.gov/pubmed/37050463 http://dx.doi.org/10.3390/s23073403 |