General Purpose Transistor Characterized as Dosimetry Sensor of Proton Beams

A commercial pMOS transistor (MOSFET), 3N163 from Vishay (USA), has been characterized as a low-energy proton beam dosimeter. The top of the samples’ housing has been removed to guarantee that protons reached the sensitive area, that is, the silicon die. Irradiations took place at the National Accel...

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Detalles Bibliográficos
Autores principales: Moreno-Pérez, J. A., Ruiz-García, I., Martín-Holgado, P., Romero-Maestre, A., Anguiano, M., Vila, R., Carvajal, M. A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10098939/
https://www.ncbi.nlm.nih.gov/pubmed/37050831
http://dx.doi.org/10.3390/s23073771

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10098939/
https://www.ncbi.nlm.nih.gov/pubmed/37050831
http://dx.doi.org/10.3390/s23073771

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