Manipulating exchange bias in 2D magnetic heterojunction for high-performance robust memory applications

The exchange bias (EB) effect plays an undisputed role in the development of highly sensitive, robust, and high-density spintronic devices in magnetic data storage. However, the weak EB field, low blocking temperature, as well as the lack of modulation methods, seriously limit the application of EB...

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Detalles Bibliográficos
Autores principales: Huang, Xinyu, Zhang, Luman, Tong, Lei, Li, Zheng, Peng, Zhuiri, Lin, Runfeng, Shi, Wenhao, Xue, Kan-Hao, Dai, Hongwei, Cheng, Hui, de Camargo Branco, Danilo, Xu, Jianbin, Han, Junbo, Cheng, Gary J., Miao, Xiangshui, Ye, Lei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10110563/
https://www.ncbi.nlm.nih.gov/pubmed/37069179
http://dx.doi.org/10.1038/s41467-023-37918-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10110563/
https://www.ncbi.nlm.nih.gov/pubmed/37069179
http://dx.doi.org/10.1038/s41467-023-37918-7

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