Cargando…

Ion-beam assisted sputtering of titanium nitride thin films

Titanium nitride is a material of interest for many superconducting devices such as nanowire microwave resonators and photon detectors. Thus, controlling the growth of TiN thin films with desirable properties is of high importance. This work aims to explore effects in ion beam-assisted sputtering (I...

Descripción completa

Detalles Bibliográficos
Autores principales: Draher, Timothy, Polakovic, Tomas, Li, Juliang, Li, Yi, Welp, Ulrich, Jiang, Jidong Samuel, Pearson, John, Armstrong, Whitney, Meziani, Zein-Eddine, Chang, Clarence, Kwok, Wai-Kwong, Xiao, Zhili, Novosad, Valentine
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10113206/
https://www.ncbi.nlm.nih.gov/pubmed/37072413
http://dx.doi.org/10.1038/s41598-023-31549-0
_version_ 1785027787486134272
author Draher, Timothy
Polakovic, Tomas
Li, Juliang
Li, Yi
Welp, Ulrich
Jiang, Jidong Samuel
Pearson, John
Armstrong, Whitney
Meziani, Zein-Eddine
Chang, Clarence
Kwok, Wai-Kwong
Xiao, Zhili
Novosad, Valentine
author_facet Draher, Timothy
Polakovic, Tomas
Li, Juliang
Li, Yi
Welp, Ulrich
Jiang, Jidong Samuel
Pearson, John
Armstrong, Whitney
Meziani, Zein-Eddine
Chang, Clarence
Kwok, Wai-Kwong
Xiao, Zhili
Novosad, Valentine
author_sort Draher, Timothy
collection PubMed
description Titanium nitride is a material of interest for many superconducting devices such as nanowire microwave resonators and photon detectors. Thus, controlling the growth of TiN thin films with desirable properties is of high importance. This work aims to explore effects in ion beam-assisted sputtering (IBAS), were an observed increase in nominal critical temperature and upper critical fields are in tandem with previous work on Niobium nitride (NbN). We grow thin films of titanium nitride by both, the conventional method of DC reactive magnetron sputtering and the IBAS method, to compare their superconducting critical temperatures [Formula: see text] as functions of thickness, sheet resistance, and nitrogen flow rate. We perform electrical and structural characterizations by electric transport and x-ray diffraction measurements. Compared to the conventional method of reactive sputtering, the IBAS technique has demonstrated a 10% increase in nominal critical temperature without noticeable variation in the lattice structure. Additionally, we explore the behavior of superconducting [Formula: see text] in ultra-thin films. Trends in films grown at high nitrogen concentrations follow predictions of mean-field theory in disordered films and show suppression of superconducting [Formula: see text] due to geometric effects, while nitride films grown at low nitrogen concentrations strongly deviate from the theoretical models.
format Online
Article
Text
id pubmed-10113206
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-101132062023-04-20 Ion-beam assisted sputtering of titanium nitride thin films Draher, Timothy Polakovic, Tomas Li, Juliang Li, Yi Welp, Ulrich Jiang, Jidong Samuel Pearson, John Armstrong, Whitney Meziani, Zein-Eddine Chang, Clarence Kwok, Wai-Kwong Xiao, Zhili Novosad, Valentine Sci Rep Article Titanium nitride is a material of interest for many superconducting devices such as nanowire microwave resonators and photon detectors. Thus, controlling the growth of TiN thin films with desirable properties is of high importance. This work aims to explore effects in ion beam-assisted sputtering (IBAS), were an observed increase in nominal critical temperature and upper critical fields are in tandem with previous work on Niobium nitride (NbN). We grow thin films of titanium nitride by both, the conventional method of DC reactive magnetron sputtering and the IBAS method, to compare their superconducting critical temperatures [Formula: see text] as functions of thickness, sheet resistance, and nitrogen flow rate. We perform electrical and structural characterizations by electric transport and x-ray diffraction measurements. Compared to the conventional method of reactive sputtering, the IBAS technique has demonstrated a 10% increase in nominal critical temperature without noticeable variation in the lattice structure. Additionally, we explore the behavior of superconducting [Formula: see text] in ultra-thin films. Trends in films grown at high nitrogen concentrations follow predictions of mean-field theory in disordered films and show suppression of superconducting [Formula: see text] due to geometric effects, while nitride films grown at low nitrogen concentrations strongly deviate from the theoretical models. Nature Publishing Group UK 2023-04-18 /pmc/articles/PMC10113206/ /pubmed/37072413 http://dx.doi.org/10.1038/s41598-023-31549-0 Text en © © UChicago Argonne, LLC, Operator of Argonne National Laboratory 2023 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Draher, Timothy
Polakovic, Tomas
Li, Juliang
Li, Yi
Welp, Ulrich
Jiang, Jidong Samuel
Pearson, John
Armstrong, Whitney
Meziani, Zein-Eddine
Chang, Clarence
Kwok, Wai-Kwong
Xiao, Zhili
Novosad, Valentine
Ion-beam assisted sputtering of titanium nitride thin films
title Ion-beam assisted sputtering of titanium nitride thin films
title_full Ion-beam assisted sputtering of titanium nitride thin films
title_fullStr Ion-beam assisted sputtering of titanium nitride thin films
title_full_unstemmed Ion-beam assisted sputtering of titanium nitride thin films
title_short Ion-beam assisted sputtering of titanium nitride thin films
title_sort ion-beam assisted sputtering of titanium nitride thin films
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10113206/
https://www.ncbi.nlm.nih.gov/pubmed/37072413
http://dx.doi.org/10.1038/s41598-023-31549-0
work_keys_str_mv AT drahertimothy ionbeamassistedsputteringoftitaniumnitridethinfilms
AT polakovictomas ionbeamassistedsputteringoftitaniumnitridethinfilms
AT lijuliang ionbeamassistedsputteringoftitaniumnitridethinfilms
AT liyi ionbeamassistedsputteringoftitaniumnitridethinfilms
AT welpulrich ionbeamassistedsputteringoftitaniumnitridethinfilms
AT jiangjidongsamuel ionbeamassistedsputteringoftitaniumnitridethinfilms
AT pearsonjohn ionbeamassistedsputteringoftitaniumnitridethinfilms
AT armstrongwhitney ionbeamassistedsputteringoftitaniumnitridethinfilms
AT mezianizeineddine ionbeamassistedsputteringoftitaniumnitridethinfilms
AT changclarence ionbeamassistedsputteringoftitaniumnitridethinfilms
AT kwokwaikwong ionbeamassistedsputteringoftitaniumnitridethinfilms
AT xiaozhili ionbeamassistedsputteringoftitaniumnitridethinfilms
AT novosadvalentine ionbeamassistedsputteringoftitaniumnitridethinfilms