Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface

[Image: see text] This work suggests new morphology for the AlGaN/GaN interface which enhances electron mobility in two-dimensional electron gas (2DEG) of high-electron mobility transistor (HEMT) structures. The widely used technology for the preparation of GaN channels in AlGaN/GaN HEMT transistors...

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Detalles Bibliográficos
Autores principales: Hospodková, Alice, Hájek, František, Hubáček, Tomáš, Gedeonová, Zuzana, Hubík, Pavel, Hývl, Matěj, Pangrác, Jiří, Dominec, Filip, Košutová, Tereza
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10119847/
https://www.ncbi.nlm.nih.gov/pubmed/37022802
http://dx.doi.org/10.1021/acsami.3c00799

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10119847/
https://www.ncbi.nlm.nih.gov/pubmed/37022802
http://dx.doi.org/10.1021/acsami.3c00799

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