Holistic Variability Analysis in Resistive Switching Memories Using a Two-Dimensional Variability Coefficient

[Image: see text] We present a new methodology to quantify the variability of resistive switching memories. Instead of statistically analyzing few data points extracted from current versus voltage (I–V) plots, such as switching voltages or state resistances, we take into account the whole I–V curve...

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Detalles Bibliográficos
Autores principales: Acal, Christian, Maldonado, David, Aguilera, Ana M., Zhu, Kaichen, Lanza, Mario, Roldán, Juan Bautista
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10119851/
https://www.ncbi.nlm.nih.gov/pubmed/37027783
http://dx.doi.org/10.1021/acsami.2c22617

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10119851/
https://www.ncbi.nlm.nih.gov/pubmed/37027783
http://dx.doi.org/10.1021/acsami.2c22617

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