Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors

[Image: see text] Memristors implemented as resistive random-access memories (RRAMs) owing to their low power consumption, scalability, and speed are promising candidates for in-memory computing and neuromorphic applications. Moreover, a vertical 3D implementation of RRAMs enables high-density cross...

Descripción completa

Detalles Bibliográficos
Autores principales: Saketh Ram, Mamidala, Svensson, Johannes, Wernersson, Lars-Erik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10119853/
https://www.ncbi.nlm.nih.gov/pubmed/37026413
http://dx.doi.org/10.1021/acsami.2c21669

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10119853/
https://www.ncbi.nlm.nih.gov/pubmed/37026413
http://dx.doi.org/10.1021/acsami.2c21669

Ejemplares similares