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Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors
[Image: see text] Memristors implemented as resistive random-access memories (RRAMs) owing to their low power consumption, scalability, and speed are promising candidates for in-memory computing and neuromorphic applications. Moreover, a vertical 3D implementation of RRAMs enables high-density cross...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10119853/ https://www.ncbi.nlm.nih.gov/pubmed/37026413 http://dx.doi.org/10.1021/acsami.2c21669 |