Isothermal Heteroepitaxy of Ge(1–x)Sn(x) Structures for Electronic and Photonic Applications

[Image: see text] Epitaxy of semiconductor-based quantum well structures is a challenging task since it requires precise control of the deposition at the submonolayer scale. In the case of Ge(1–x)Sn(x) alloys, the growth is particularly demanding since the lattice strain and the process temperature...

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Detalles Bibliográficos
Autores principales: Concepción, Omar, Søgaard, Nicolaj B., Bae, Jin-Hee, Yamamoto, Yuji, Tiedemann, Andreas T., Ikonic, Zoran, Capellini, Giovanni, Zhao, Qing-Tai, Grützmacher, Detlev, Buca, Dan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10134428/
https://www.ncbi.nlm.nih.gov/pubmed/37124237
http://dx.doi.org/10.1021/acsaelm.3c00112

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10134428/
https://www.ncbi.nlm.nih.gov/pubmed/37124237
http://dx.doi.org/10.1021/acsaelm.3c00112

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